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Dry Etching System with XRG - 800 Standard Radical Generator

The XCD - 70X system operates on the CDE (Chemical Dry Etch) dry etch principle by use of six microwave radical generators. In this process, radicals with a lifetime of approximately 0.7s are generated outside the process chamber by microwave radical generators, and then fed into the chamber. 

The chamber receives the pallets with 10 pieces of diode-plate with 300 diodes each. The radicals are led into the chamber via four inlets, positioned over the length of the chamber to obtain a statically good distribution. The exhaust is via three outlets on the chamber wall opposite the inlets and 100mm VAT control valve. The reaction gases are fed into the radical generators via stainless steel gas lines, each with an inlet filter, mass flow controller, and a shut off valve. Typical reaction gases for this process are SF6 and N2O (or CF4 and O2). The pressure inside the chamber is controlled via capacity pressure sensors by the gas flow and the vacuum valve.

Automatic control of process steps, e.g. evacuation, process gas and gas flow, start/stop of radical generators, purging the chamber, venting with inert gas (nitrogen) after completion of a process. This control system is also for gas lines, operating pressure and malfunctions of radical generators. In critical situations it will stop the process and indicate the fault.

The whole dry etch system is built into a cabinet. The lower part underneath the process chamber consists of 19" racks, the upper part with process chamber and radical generators has 3 vertically operating doors, each 19" wide, for easy service access.

 

Specification for different model of XCD - 70X

Model XCD-704 XCD-704L XCD-704XL XCD-705 XCD-706
Chamber size dia./length in cm 65 x 140 65 x 150 65 x 170 95 x 150 95 x 170
Diode plates (20x29 cm2) per load 10 12 14 15 21
Total amount of diodes per run 3200 3840 4480 4800 6720
Radical generators 4 x 850 W 4 x 850 W 4 x 1250 W 5 x 1250 W 6 x 1250 W
Total power 3400 W 3400 W 5000 W 6250 W 7500 W
Watts per diode [W/d] 1.06 0.88 1.17 1.3 1.12

 

XCD - 725 High rate dry etch system with XRG - 900 Radical Generator

The XCD - 725 high rate dry etch system is designed for etching 200 µm deep moats (trenched) into 100 mm silicon wafers. The wafers are coated with photoresist with some areas opened. The throughput is 50 wafer per hour. XCD - 725 operates on the high rate dry etch principle by use of 12 kW microwave source with five traveling wave rods for the generation of UV radiation, ions and highly effective radicals from the etch gas with life time of approximately 0.7s inside the process chamber.

 

Features of Dry Etch Process

  • Additional Capacity and less space
  • More uniformity and cleaner die attack process
  • Less process variability
  • More reliable process
  • No P-N and junction selectivity
  • No under-etching on P+ and N+
  • Very sharp reverse current curves - steep breakthrough curves
  • Improved residual current response
  • Improved long term stability
  • Improved process reproducibility
  • In-situ process control (constant pressure increasing according to constant quantity of radicals and therefore, etch rate. Temperature barely enters into the etch rate. RGA-option)
  • Uniformity etching due to absence of "hot spots" as in wet etching
  • Environmental friendly due to uncritical and easy disposable gases
Please contact Secon for more information on the machine specification.
 

XCD - 704 Diode Etch System

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Copyright © 2002 Secon Semiconductor Equipment (M) Sdn. Bhd.
Last modified: Oktober 28, 2004