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Dry Etching and Deposition System with XRG - 800 Standard Radical GeneratorXED - 70X Dry Chemical Etch System is designed for CDE (Chemical Dry Etch) processes and for low temperature Si3N4 deposition processes. The samples can be processed fully automatically in a multistep process without breaking the vacuum. Loading and unloading of the samples is done manually through the front door of the horizontally mounted reaction chamber. In the etching process, the radicals are generated outside the process chamber by a microwave radical generators, and then fed into the chamber via one inlet on the top of the chamber. The exhaust is via an outlet on the chamber wall opposite the inlet. The reaction gases are fed into the radical generator via stainless steel gas lines, each with an inlet filter, mass flow controller and shut-off-valve. The pressure inside the chamber is monitored by capacity pressure sensors and controlled by the gas flow and the exhaust vacuum control valve. The XED - 70X deposition process for Si3N4 layers uses nitrogen radicals, obtained from N2 dissociation in the high density microwave plasma of the radical generator XRG-800. The radical generator is able to concentrate sufficient energy of nitrogen dissociation. This makes it possible to produce highly reactive nitrogen without using ammonia with its number of disadvantages such as increased binding of hydrogen to silicon. The nitrogen radicals react on the substrate surface with SiH4 to Si3N4. This surface reaction is obtained due to a surface temperature between 250 ºC and 380 °C (depending on the technological requirements) and also by a RF bias supplied to the substrates. The result is Si3N4 layers with excellent values for density, hydrogen bonding compressive stress, produced at relatively low temperatures. The nitrogen radicals come into the chamber from the radical generator, positioned on top of the chamber. The exhaust is via an outlet on the chamber wall opposite to the inlet. Pressure control is by 40 mm VAT control valve. The reaction gases are fed into the radical generator and distribution system via stainless steel gas lines with an inlet filter each, mass flow controllers, and a lock-valve. The pressure inside the chamber is controlled via capacity pressure sensors by the gas flow and the vacuum valve. Automatic control of process steps, e.g. evacuation, process gas and gas flow, start/stop of radical generators, purging the chamber, venting with inert gas (nitrogen) after completion of a process. This control system is also for gas lines, operating pressure and malfunctions of radical generators. In critical situations it will stop the process and indicate the fault.
XED - 702 Diode Etch and Passivation System |
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