 Dry Etch Cluster System for High Speed Wafer Thinning
The XPL-900 SLIM multi-chamber etcher is a modular production
system. It is designed for processing 100mm to 200mm wafers and can be equipped
with up to 4 process chambers for the short thinning process (pre-ground wafers
to be thinned from 180 µm to 100 - 50 µm) or with up to 6 process chambers for
the long thinning process (wafers to be thinned from standard thickness to 100 -
50 µm).
The XPL-900 SLIM is designed for "through the wall"
installation. The basic platform consists of load-lock-chamber and control unit,
with the possibility to connect up to six (eight) chambers (process-chambers,
load- and unload chambers) via vacuum valves to the load-lock-chamber.
The control unit consist of the microprocessor board for the
machine functions and a personal computer for process control, administration
and the dialogue with the operator. The SLIM process chambers are designed for
wafer thinning in the CDE/RIE/UV-mode using ions, UV-radiation and long lifetime
radicals from the microwave-ion-source.
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XPL-900 with 2 process chambers and 3 cassette
chambers for loading, unloading and paper dispenser |
Specifications
| Wafer size: |
100, ....., 300 mm |
| Wafer cooling: |
Electrostatic chuck, He-cooling |
| Wafer handling: |
Wafer handling with electrostatic applicator end piece |
| Microwave
generator: |
2.45 GHz, 4000 W (per etch module) |
| RF
generator: |
13.56 MHz, 0 - 2000 W (per etch module) |
| Etch rate: |
25 µm/min on a 200mm Si wafer (SiF6
and N2O) |
| Etch
Uniformity: |
£ ±
2% |
| Wafer temperature |
< 100 ºC (during etch process) |
| Surface quality: |
Adjustable by process parameters |
| Footprint of Etch module: |
200 x 75 cm2 |
| Gases supply: |
SF6, N2O, N2
and He |
| Electricity: |
3 x 380 V, 15KVA (etch module), 3 x 380 V,
2.2kVA (Alcatel Pump), 3 x 380 V, 8.2kVA (Ebara pump), 220V (PC operation) |
High Etch Rate by the XPL - 900
| Material |
Plain Wafer |
Structured Wafer |
| Si |
25 µm/min |
> 40 µm/min |
| GaAs |
> 5 µm/min |
> 15 µm/min |
| SiC |
> 3 µm/min |
> 10 µm/min |
Features
- Etch Rate for Silicon wafers (150.... 200mm) > 25
µm/min, thus
high throughput
- Homogeneity of etch rate (wafer thickness) ± 2% typically, ± 5%
guaranteed
- Surface quality is adjustable from as polished to velvet-like
- Wafer bow and warpage improvement after dry etching
- Die breaking strength improvement after damage removal and stress
relief
- Wafer edges: soft edge rounding avoids wafer breakage caused by
sharp wafer edges
- Wafer temperature typically < 100 °C,
guaranteed < 120 °C
- Wafer handling: wafer fixed in
defined position
- Low
energy and gas consumption
-
Lower cost of ownership
Further
Development with XPL - 900
It is due to the high demands of ultra thin wafer applications in the
semiconductor industry, Secon has set the goal to continue it's development with
the XPL - 900 in order to achieve
- Wafer thinning up below 50 µm (Typically 30 µm) with lower cost of
ownership compare to other CMP, wet processing or polishing process
- Trench etching for die separation
- Bump wafer thinning
- Via hole etching
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