XRG-900 High Rate Etch Source

Secon developed the new high rate SLM etch technology on the basis of the Secon radical generator using a combined CDE / RIE / UV (Chemical Dry Etch / Reactive Ion Etch / Ultra Violet Radiation) fluorine process with an etch rate of 30 - 50 µm/min.

Microwave energy is applied to four traveling wave rods forming a plasma environment of ions, radicals and UV radiation. The wafer underneath is RF-biased thus extracting the ions from the plasma towards the wafer surface. Process gases are SF₆ and N₂O. The F-radicals of the SF₆ form SiF₄ which is volatile and pumped away. Since the forming of SiF₄ is an exothermal process, the big amount of Si to be converted into SiF₄ is responsible for significant production of heat. Wafer temperature are kept low level (<100 ºC) by use of an electrostatic chuck with Helium cooling. The result is an unmatched high etch rate.

The process chamber of anodized aluminum consists of three parts: 

• The chamber body, square on the outside, has a VAT Monovat valve on one side of connection to the central load lock chamber. The inner diameter is 360mm and permits processing of 100mm to 200mm wafers
• The bottom part with an electrostatic wafer chuck with RF-bias. It also holds the vacuum exhaust ports
• The chamber top part holds four horizontal roads, the antennas of four microwave ion sources.

Each high rate source consist of a horizontal rod coupled to a microwave cavity. The horizontal rod acts as an antenna for traveling waves with coaxial shielding from the microwave cavity to the active area inside the reaction chamber and also at the end of the antenna as an end piece.

Key Benefits

• Unmatched High Etch Rate with the combination of CDE / RIE
• Wafer temperature was kept between 100 ºC

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Copyright © 2002 Secon Semiconductor Equipment (M) Sdn. Bhd.
Last modified: Oktober 28, 2004